IXXH30N65B4 Datasheet - IXYS

IXXH30N65B4 650V IGBTs

Preliminary Technical Information XPTTM 650V IGBT GenX4TM Extreme Light Punch Through IGBT for 5-30kHz Switching IXXH30N65B4 C G E VCES = IC110 = V ≤CE(sat) tfi(typ) = 650V 30A 2.0V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 1.

IXXH30N65B4 Features

* z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 2

IXXH30N65B4-IXYS.pdf