* z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 2
IXXH30N65B4 Datasheet (165.39 KB)
IXXH30N65B4
IXYS
165.39 KB
650v igbts.
Preliminary Technical Information
XPTTM 650V IGBT GenX4TM
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXXH30N65B4
C G
E
VCES = IC110 = V.
📁 Related Datasheet
IXXH30N65C4D1 - Extreme Light Punch Through IGBT
(IXYS)
Advance Technical Information
XPTTM 650V IGBT GenX4TM w/ Diode
IXXH30N65C4D1
Extreme Light Punch Through IGBT for 20-60 kHz Switching
VCES = 650V
.
IXXH30N60B3 - Extreme Light Punch Through IGBT
(IXYS)
XPTTM 600V IGBT GenX3TM
Extreme Light Punch Through IGBT for 5-30 kHz Switching
IXXH30N60B3
VCES = 600V
IC110 = 30A
V CE(sat)
1.85V
tfi(ty.
IXXH30N60B3D1 - 600V IGBT
(IXYS)
XPTTM 600V IGBT GenX3TM w/ Diode
IXXH30N60B3D1
Extreme Light Punch Through IGBT for 5-30 kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 .
IXXH30N60C3 - 600V IGBTs
(IXYS)
XPTTM 600V IGBT GenX3TM
IXXH30N60C3
Extreme Light Punch Through IGBT for 20-60 kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA .
IXXH30N60C3D1 - 600V IGBTs
(IXYS)
XPTTM 600V IGBT GenX3TM w/ Diode
IXXH30N60C3D1
Extreme Light Punch Through IGBT for 20-60 kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110.
IXXH100N60B3 - IGBT
(IXYS)
XPTTM 600V IGBT GenX3TM
IXXH100N60B3
Extreme Light Punch Through IGBT for 10-30 kHz Switching
VCES = IC110 =
V ≤ CE(sat) tfi(typ) =
600V 100A
1.80.
IXXH100N60C3 - IGBT
(IXYS)
Preliminary Technical Information
XPTTM 600V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXXH100N60C3
VCES = IC110 =
V ≤ C.
IXXH110N65B4 - 650V IGBT
(IXYS)
XPTTM 650V IGBT GenX4TM
IXXH110N65B4
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = 650V
I
= 110A
C110
V 2.10V CE(sat)
tf.
