IXXH30N60B3D1 Datasheet - IXYS

IXXH30N60B3D1 600V IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Ma.

IXXH30N60B3D1 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Ultra Fast Diode

* Avalanche Capability

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* 175°C Rated

* Extremely Rugged

* Low Gate Drive Requirement A

IXXH30N60B3D1-IXYS.pdf