IXXH100N60B3 Datasheet - IXYS

IXXH100N60B3 IGBT

XPTTM 600V IGBT GenX3TM IXXH100N60B3 Extreme Light Punch Through IGBT for 10-30 kHz Switching VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 100A 1.80V 150ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Ind.

IXXH100N60B3 Features

* z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z

IXXH100N60B3-IXYS.pdf