IXXH100N60C3 Datasheet - IXYS

IXXH100N60C3 IGBT

Preliminary Technical Information XPTTM 600V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXXH100N60C3 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 100A 2.20V 75ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, .

IXXH100N60C3 Features

* z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z

IXXH100N60C3-IXYS.pdf