* Optimized for 20-60kHz Switching
* Square RBSOA
* Anti-Parallel Diode
* Short Circuit Capability
* International Standard Package Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise S
IXXH30N65C4D1 Datasheet (225.69 KB)
IXXH30N65C4D1
IXYS
225.69 KB
Extreme light punch through igbt.
Advance Technical Information XPTTM 650V IGBT GenX4TM w/ Diode IXXH30N65C4D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V .
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