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IXXH30N65C4D1 Extreme Light Punch Through IGBT

IXXH30N65C4D1 Description

Advance Technical Information XPTTM 650V IGBT GenX4TM w/ Diode IXXH30N65C4D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V .

IXXH30N65C4D1 Features

* Optimized for 20-60kHz Switching
* Square RBSOA
* Anti-Parallel Diode
* Short Circuit Capability
* International Standard Package Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise S

IXXH30N65C4D1 Applications

* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts © 2016 IXYS CORPORATION, All Rights Reserved DS100767(12/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 30A, VCE = 10V,

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Datasheet Details

Part number
IXXH30N65C4D1
Manufacturer
IXYS
File Size
225.69 KB
Datasheet
IXXH30N65C4D1-IXYS.pdf
Description
Extreme Light Punch Through IGBT

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