IXXH30N65C4D1 Datasheet - IXYS

IXXH30N65C4D1 - Extreme Light Punch Through IGBT

Advance Technical Information XPTTM 650V IGBT GenX4TM w/ Diode IXXH30N65C4D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 30A V CE(sat)  2.50V tfi(typ) = 28ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15 Cla.

IXXH30N65C4D1 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* Anti-Parallel Diode

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise S

IXXH30N65C4D1-IXYS.pdf