MMJX1H40N150 Datasheet - IXYS

MMJX1H40N150 1500V MOS Gated Thyristor

1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 50/60Hz, 1 minute Mounting Force Maximum Ratings 1500 V ±30 V ±40 V 15.5 kA 6.4 kA 320 W -55 +150 °C 150 °C -55 +150 °C 300 °C 260 °C .

MMJX1H40N150 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* Very High Current Capability Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Capacitive Discharge Circuits

* Ignition Circuits

MMJX1H40N150-IXYS.pdf

MMJX1H40N150 Datasheet Preview — Preview of MMJX1H40N150 PDF

Datasheet Details

Part number:

MMJX1H40N150

Manufacturer:

IXYS

File Size:

266.81 KB

Description:

1500v mos gated thyristor.

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