* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Very High Current Capability Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Capacitive Discharge Circuits
* Ignition Circuits
MMJX1H40N150 Datasheet (266.81 KB)
MMJX1H40N150
IXYS
266.81 KB
1500v mos gated thyristor.
1500V MOS Gated Thyristor
MMJX1H40N150
A
VDM = 1500V
A
(Electrically Isolated Tab)
G K
G Ks Ks
K
Symbol VDM VGK VGK ITSM
PD TJ TJM Tstg TL TSOLD.
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