MMJX1H40N150 1500V MOS Gated Thyristor

IXYS

Description

1500V MOS Gated Thyristor MMJX1H40N150 A VDM = 1500V A (Electrically Isolated Tab) G K G Ks Ks K Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD.

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Datasheet Specifications

Part number: MMJX1H40N150
Manufacturer: IXYS
File Size: 266.81 KB
Datasheet: MMJX1H40N150-IXYS.pdf
Description: 1500V MOS Gated Thyristor

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Very High Current Capability Advantages
* High Power Density

Applications

* Capacitive Discharge Circuits
* Ignition Circuits
* Solid State Surge Protection © 2017 IXYS CORPORATION, All Rights Reserved DS100594C(12/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Ciks Coks Crks VAK = 25V, VGK = 0V, f = 1MHz Qg(on) Qgk Qga IC = 40A, VGK

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MMJX1H40N150 1500V MOS Gated Thyristor IXYS

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