Datasheet4U Logo Datasheet4U.com

MMJT9435 Datasheet - Motorola

MMJT9435 Bipolar Power Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMJT9435/D Preliminary Data Sheet PNP Silicon High DC Current Gain hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc Bipolar Power Transistors Collector Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc MMJT9435 Motorola Preferred Device POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS Low Collector Emitter Saturation V.

MMJT9435 Datasheet (94.73 KB)

Preview of MMJT9435 PDF
MMJT9435 Datasheet Preview Page 2 MMJT9435 Datasheet Preview Page 3

Datasheet Details

Part number:

MMJT9435

Manufacturer:

Motorola

File Size:

94.73 KB

Description:

Bipolar power transistors.

📁 Related Datasheet

MMJT9435 Bipolar Power Transistors PNP Silicon (ON Semiconductor)

MMJT9410 Bipolar Power Transistors (Motorola)

MMJT9410 Bipolar Power Transistors NPN Silicon (ON Semiconductor)

MMJT350 Bipolar Power Transistors (ON Semiconductor)

MMJT350T1 Bipolar Power Transistors (ON Semiconductor)

MMJT350T1G Bipolar Power Transistors (ON Semiconductor)

MMJX1H40N150 1500V MOS Gated Thyristor (IXYS)

MM-005 GEArray Q series Mouse Chemokines and Receptors Gene Array (ETC)

TAGS

MMJT9435 Bipolar Power Transistors Motorola

MMJT9435 Distributor