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ICE20N170 - N-Channel Enhancement Mode MOSFET

ICE20N170 Description

Preliminary Data Sheet ICE20N170 ICE20N170 N-Channel Enhancement Mode MOSFET .

ICE20N170 Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems HA

ICE20N170 Applications

* in process in the USA and the above listed countries. SP-20N170-000-5 05/15/2013 Free Datasheet http://www. datasheet4u. com/ 8 Preliminary Data Sheet ICE20N170 Marking Information YY = Last two digits of the year WW = Work week calendar on Icemos subcon assembly & test house
* = Initial

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Datasheet Details

Part number
ICE20N170
Manufacturer
Icemos
File Size
706.00 KB
Datasheet
ICE20N170_Icemos.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET Icemos
Icemos ICE20N170-like datasheet