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ICE22N65W Datasheet - Micross Components

ICE22N65W - N-Channel MOSFET

TO-247 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operatin

ICE22N65W Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

ICE22N65W-MicrossComponentspdf

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Datasheet Details

Part number:

ICE22N65W

Manufacturer:

Micross Components

File Size:

694.16 KB

Description:

N-channel mosfet.

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