ICE22N65W
Micross Components
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N-channel mosfet. TO-247 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulse
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ICE22N65W - N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
ICE22N65W ICE22N65W N-Channel
Enhancement Mode MOSFET
Features
• TO247 package • Low rDS(on) • Ultra Low Gate Charge • High dv.
ICE22N60 - N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
ICE22N60 ICE22N60 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.
ICE22N60 - N-Channel MOSFET
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ICE22N60
N-Channel Enhancement Mode MOSFET
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r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE22N60W - N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
ICE22N60W ICE22N60W N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability •.
ICE22N60W - N-Channel MOSFET
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ICE22N60W
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin.
ICE20N170 - N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
ICE20N170 ICE20N170 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability •.
ICE20N170 - N-Channel MOSFET
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ICE20N170
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin.
ICE20N170B - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N170B ICE20N170B N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE20N170B - N-Channel MOSFET
(Micross Components)
ICE20N170B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE20N170FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N170FP ICE20N170FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capabili.