ICE11N65FP
Micross Components
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N-channel mosfet. TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulse
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ICE11N65FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE11N65FP ICE11N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE11N70 - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE11N70 ICE11N70 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.
ICE11N70 - N-Channel MOSFET
(Micross Components)
ICE11N70
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE11N70FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE11N70FP ICE11N70FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE11N70FP - N-Channel MOSFET
(Micross Components)
ICE11N70FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE10N60 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N60FP - N-Channel MOSFET
(Micross Components)
ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 600V 0.28Ω 41nC
.
ICE10N65 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive.
ICE10N65 - N-Channel Enhancement Mode MOSFET
(Micross Components)
ICE10N65
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N65FP - N-Channel MOSFET
(Micross Components)
ICE10N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.