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ICE11N65FP

N-Channel MOSFET

ICE11N65FP Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

ICE11N65FP General Description

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operatin.

ICE11N65FP Datasheet (704.13 KB)

Preview of ICE11N65FP PDF

Datasheet Details

Part number:

ICE11N65FP

Manufacturer:

Micross Components

File Size:

704.13 KB

Description:

N-channel mosfet.

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ICE11N65FP N-Channel MOSFET Micross Components

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