ICE10N60FP Datasheet - Micross Components

ICE10N60FP, N-Channel MOSFET

ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC .
TO-220 G Value 10 30 340 5 50 ±20 ±30 35 -55 to +150 50 Unit A A mJ A V/ns V W °C Ncm Conditions TC = 25°C TC = 25°C ID = 8.

Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified

ICE10N60FP-Icemos.pdf