ICE10N60FP
Micross Components
707.13kb
N-channel mosfet. TO-220 G Value 10 30 340 5 50 ±20 ±30 35 -55 to +150 50 Unit A A mJ A V/ns V W °C Ncm Conditions TC = 25°C TC = 25°C ID = 8.3A
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📁 Related Datasheet
ICE10N60 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N65 - N-Channel Enhancement Mode MOSFET
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• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive.
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(Micross Components)
ICE10N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE10N73 - N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
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ICE10N73 N-Channel
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ICE10N73 - N-Channel Enhancement Mode MOSFET
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Features:
r Low DS(on)
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Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE11N65FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE11N65FP ICE11N65FP N-Channel
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Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE11N65FP - N-Channel MOSFET
(Micross Components)
ICE11N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
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ICE11N70 - N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
ICE11N70 ICE11N70 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.