Part number:
ICE13N65FP
Manufacturer:
Micross Components
File Size:
706.95 KB
Description:
N-channel mosfet.
* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P
ICE13N65FP Datasheet (706.95 KB)
ICE13N65FP
Micross Components
706.95 KB
N-channel mosfet.
📁 Related Datasheet
ICE13N65FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE13N65FP ICE13N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE13N65 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE13N65
ICE13N65 N-Channel
Enhancement Mode MOSFET
ID V(BR)DSS
Product Summary
TA=25oC
13A
ID=250uA 650V
Max Min
Features
• Low rDS(on) • Ult.
ICE13N65 - N-Channel MOSFET
(Micross Components)
ICE13N65
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N60 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N60FP - N-Channel MOSFET
(Micross Components)
ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 600V 0.28Ω 41nC
.
ICE10N65 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive.
ICE10N65 - N-Channel Enhancement Mode MOSFET
(Micross Components)
ICE10N65
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N65FP - N-Channel MOSFET
(Micross Components)
ICE10N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.