ICE10N60 Datasheet - Icemos

ICE10N60, N-Channel Enhancement Mode MOSFET

ICE10N60 N-Channel Enhancement Mode MOSFET .
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current A.

Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

ICE10N60-Icemos.pdf