ICE10N60 N-Channel Enhancement Mode MOSFET

Icemos

Description

ICE10N60 N-Channel Enhancement Mode MOSFET .
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current A.

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Datasheet Specifications

Part number: ICE10N60
Manufacturer: Icemos
File Size: 724.39 KB
Datasheet: ICE10N60-Icemos.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

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ICE10N60 N-Channel Enhancement Mode MOSFET Icemos

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