ICE10N60 Datasheet - Icemos

ICE10N60 - N-Channel Enhancement Mode MOSFET

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operatin.

ICE10N60 Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

ICE10N60-Icemos.pdf

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Datasheet Details

Part number:

ICE10N60

Manufacturer:

Icemos

File Size:

724.39 KB

Description:

N-channel enhancement mode mosfet.

ICE10N60 Distributor

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ICE10N60 N-Channel Enhancement Mode MOSFET Icemos