ICE13N65 N-Channel Enhancement Mode MOSFET

Icemos

Description

ICE13N65 ICE13N65 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC 13A ID=250uA 650V Max Min .

📥 Download Datasheet

ICE13N65 Datasheet Preview — Preview of ICE13N65 PDF

Datasheet Specifications

Part number: ICE13N65
Manufacturer: Icemos
File Size: 381.73 KB
Datasheet: ICE13N65_Icemos.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems H

Applications

* in process in the USA and the above listed countries. SP-13N65-000-6 06/06/2014 9 ICE13N65 Marking Information YY = Last two digits of the year WW = Work week calendar on Icemos subcon assembly & test house
* = Initial for Icemos subcon assembly and test house YYWW
* XXXXXX ICE13N65

ICE13N65 Distributors

📁 Related Datasheet

ICE10N60FP ICE10N65FP ICE10N73FP ICE11N70 ICE11N70FP ICE1230

📌 All Tags

ICE13N65 N-Channel Enhancement Mode MOSFET Icemos

Icemos ICE13N65-like datasheet