Datasheet Details
- Part number
- ICE13N65
- Manufacturer
- Icemos
- File Size
- 381.73 KB
- Datasheet
- ICE13N65_Icemos.pdf
- Description
- N-Channel Enhancement Mode MOSFET
ICE13N65 Description
ICE13N65 ICE13N65 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC 13A ID=250uA 650V Max Min .
ICE13N65 Features
* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems
H
ICE13N65 Applications
* in process in the USA and the above listed countries. SP-13N65-000-6 06/06/2014
9
ICE13N65
Marking Information
YY = Last two digits of the year
WW = Work week calendar on Icemos subcon assembly & test house
* = Initial for Icemos subcon assembly and test house
YYWW
* XXXXXX ICE13N65
📁 Related Datasheet
📌 All Tags