Datasheet4U Logo Datasheet4U.com

ICE11N65FP

N-Channel Enhancement Mode MOSFET

ICE11N65FP Features

* Low rDS(on)

* Ultra Low Gate Charge

* High dv/dt capability

* High Unclamped Inductive Switching (UIS) capability

* High peak current capability

* Increased transconductance performance

* Optimized design for high performance power systems HA

ICE11N65FP Datasheet (721.20 KB)

Preview of ICE11N65FP PDF

Datasheet Details

Part number:

ICE11N65FP

Manufacturer:

Icemos

File Size:

721.20 KB

Description:

N-channel enhancement mode mosfet.

📁 Related Datasheet

ICE11N65FP - N-Channel MOSFET (Micross Components)
ICE11N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.

ICE11N70 - N-Channel Enhancement Mode MOSFET (Icemos)
Preliminary Data Sheet ICE11N70 ICE11N70 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.

ICE11N70 - N-Channel MOSFET (Micross Components)
ICE11N70 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.

ICE11N70FP - N-Channel Enhancement Mode MOSFET (Icemos)
Preliminary Data Sheet ICE11N70FP ICE11N70FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.

ICE11N70FP - N-Channel MOSFET (Micross Components)
ICE11N70FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.

ICE10N60 - N-Channel Enhancement Mode MOSFET (Icemos)
ICE10N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.

ICE10N60FP - N-Channel MOSFET (Micross Components)
ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC .

ICE10N65 - N-Channel Enhancement Mode MOSFET (Icemos)
ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive.

TAGS

ICE11N65FP N-Channel Enhancement Mode MOSFET Icemos

Image Gallery

ICE11N65FP Datasheet Preview Page 2 ICE11N65FP Datasheet Preview Page 3

ICE11N65FP Distributor