ICE10N65 Datasheet - Icemos

ICE10N65, N-Channel Enhancement Mode MOSFET

ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET .

Features

* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems H

Applications

* in process in the USA and the above listed countries. SP-10N65-000-7 06/26/2014 8 ICE10N65 Marking Information YY = Last two digits of the year WW = Work week calendar on Icemos subcon assembly & test house
* = Initial for Icemos subcon assembly and test house YYWW
* XXXXXX ICE10N65

ICE10N65-Icemos.pdf