Datasheet Details
- Part number
- ICE10N65
- Manufacturer
- Icemos
- File Size
- 343.53 KB
- Datasheet
- ICE10N65-Icemos.pdf
- Description
- N-Channel Enhancement Mode MOSFET
ICE10N65 Description
ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET .
ICE10N65 Features
* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
* Increased transconductance performance
* Optimized design for high performance power systems
H
ICE10N65 Applications
* in process in the USA and the above listed countries. SP-10N65-000-7 06/26/2014
8
ICE10N65
Marking Information
YY = Last two digits of the year
WW = Work week calendar on Icemos subcon assembly & test house
* = Initial for Icemos subcon assembly and test house
YYWW
* XXXXXX ICE10N65
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