ICE11N70FP Datasheet, Mosfet, Icemos

ICE11N70FP Features

• Mosfet
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capabilit

PDF File Details

Part number:

ICE11N70FP

Manufacturer:

Icemos

File Size:

725.23kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode mosfet.

ICE11N70FP Application

• Applications in process in the USA and the above listed countries. SP-11N70FP-000-6 07/17/2013 Free Datasheet http://www.datasheet4u.com/ 8 Prel

TAGS

ICE11N70FP

Icemos

📁 Related Datasheet

ICE11N70FP - N-Channel MOSFET (Micross Components)
ICE11N70FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.

ICE11N70 - N-Channel Enhancement Mode MOSFET (Icemos)
Preliminary Data Sheet ICE11N70 ICE11N70 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.

ICE11N70 - N-Channel MOSFET (Micross Components)
ICE11N70 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.

ICE11N65FP - N-Channel Enhancement Mode MOSFET (Icemos)
Preliminary Data Sheet ICE11N65FP ICE11N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.

ICE11N65FP - N-Channel MOSFET (Micross Components)
ICE11N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.

ICE10N60 - N-Channel Enhancement Mode MOSFET (Icemos)
ICE10N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.

ICE10N60FP - N-Channel MOSFET (Micross Components)
ICE10N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC .

ICE10N65 - N-Channel Enhancement Mode MOSFET (Icemos)
ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive.

ICE10N65 - N-Channel Enhancement Mode MOSFET (Micross Components)
ICE10N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.

ICE10N65FP - N-Channel MOSFET (Micross Components)
ICE10N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.