Part number:
ICE10N65
Manufacturer:
Micross Components
File Size:
718.64 KB
Description:
N-channel enhancement mode mosfet.
* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P
ICE10N65 Datasheet (718.64 KB)
ICE10N65
Micross Components
718.64 KB
N-channel enhancement mode mosfet.
📁 Related Datasheet
ICE10N60 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N60FP - N-Channel MOSFET
(Micross Components)
ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID V(BR)DSS rDS(ON)
Qg
Product Summary
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
10A 600V 0.28Ω 41nC
.
ICE10N65 - N-Channel Enhancement Mode MOSFET
(Icemos)
ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive.
ICE10N65FP - N-Channel MOSFET
(Micross Components)
ICE10N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE10N73 - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE10N73
ICE10N73 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.
ICE10N73 - N-Channel Enhancement Mode MOSFET
(Micross Components)
ICE10N73
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE10N73FP - N-Channel MOSFET
(Micross Components)
ICE10N73FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE11N65FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE11N65FP ICE11N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.