Datasheet Details
| Part number | ICE10N65 |
|---|---|
| Manufacturer | Micross Components |
| File Size | 718.64 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
|
|
|
|
The ICE10N65 is N-Channel Enhancement Mode MOSFET designed by Micross Components.
| Part number | ICE10N65 |
|---|---|
| Manufacturer | Micross Components |
| File Size | 718.64 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
|
|
|
|
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 9.5 28.5 340 5 50 ±20 ±30 95 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 9.5A, Tj = 125°C Stati
📁 Similar Datasheet