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ICE10N65

The ICE10N65 is N-Channel Enhancement Mode MOSFET designed by Micross Components.

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Part number ICE10N65
Manufacturer Micross Components
File Size 718.64 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ICE10N65-MicrossComponents.pdf
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Description

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 9.5 28.5 340 5 50 ±20 ±30 95 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 9.5A, Tj = 125°C Stati

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