ICE20N170FP
Icemos
720.62kb
N-channel enhancement mode mosfet.
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📁 Related Datasheet
ICE20N170FP - N-Channel MOSFET
(Micross Components)
ICE20N170FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switch.
ICE20N170 - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N170 ICE20N170 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability •.
ICE20N170 - N-Channel MOSFET
(Micross Components)
ICE20N170
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchin.
ICE20N170B - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N170B ICE20N170B N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE20N170B - N-Channel MOSFET
(Micross Components)
ICE20N170B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE20N170U - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N170U ICE20N170U N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.
ICE20N170U - N-Channel MOSFET
(Micross Components)
ICE20N170U
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi.
ICE20N65 - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N65 ICE20N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H.
ICE20N65 - N-Channel MOSFET
(Micross Components)
ICE20N65
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching.
ICE20N65FP - N-Channel Enhancement Mode MOSFET
(Icemos)
Preliminary Data Sheet
ICE20N65FP ICE20N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability.