2SA1216 Silicon PNP Power Transistor

Inchange Semiconductor Company Limited

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min). Good Linearity of hFE. Complement to Type 2SC2922. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SA1216
Manufacturer: Inchange Semiconductor Company Limited
File Size: 200.08 KB
Datasheet: 2SA1216_InchangeSemiconductorCompanyLimited.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IB Base Current-

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2SA1216 Silicon PNP Power Transistor Inchange Semiconductor Company Limited

Inchange Semiconductor Company Limited 2SA1216-like datasheet