2SA1213 - Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collect
2SA1213 Features
* document, whether express or implied, by estoppel or otherwise.
* ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITAT