2SA1213 Datasheet - Toshiba Semiconductor

2SA1213 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collect.

2SA1213 Features

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2SA1213_ToshibaSemiconductor.pdf