2SA1216 - Silicon PNP Epitaxial Planar Transistor

Sanken electric

Datasheet Details

Part number	2SA1216
Manufacturer	Sanken electric
File Size	24.37 KB
Description	Silicon PNP Epitaxial Planar Transistor
Datasheet	2SA1216 Datasheet
Additional preview pages of the 2SA1216 datasheet.

📁 Similar Datasheet

2SA1216 - Silicon PNP Power Transistor (Inchange Semiconductor Company Limited)
2SA1210 - Epitaxial Planar Silicon Transistor (Sanyo)
2SA1213 - Silicon PNP Transistor (Toshiba Semiconductor)
2SA1213 - Silicon Planar Epitaxial Transistor (GME)
2SA1213 - Transistors (Kexin)
2SA1213 - PNP Transistor (JCET)
2SA1213 - PNP Transistor (Diodes)
2SA1213 - Plastic-Encapsulate Transistors (WILLAS)
2SA1213 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SA1213-G - General Purpose Transistor (Comchip)

Other Datasheets by Sanken electric

2SA1215 - Silicon PNP Transistor
2SA1262 - Silicon PNP Transistor
2SA1294 - Silicon PNP Transistor
2SA1295 - Silicon PNP Transistor
2SA1186 - Silicon PNP Epitaxial Planar Transistor
2SA1303 - Silicon PNP Transistor
2SA1386 - Silicon PNP Transistor
2SA1386A - Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text

LAPT 2SA1216 Application : Audio and General Purpose (Ta=25°C) 2SA1216 –100max –100max –180min 30min∗ –2.0max 40typ 500typ V MHz pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1216 –180 –180 –5 –17 –5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics SymboI VCBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–180V VEB=–5V IC=–25mA VCE=–4V, IC=–8A IC=–8A, IB=–0.8A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.

Published: Mar 22, 2005 |