2SA1214 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1214 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SA1214
Manufacturer: Inchange Semiconductor
File Size: 208.97 KB
Datasheet: 2SA1214-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Desinged for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipati

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2SA1214 Silicon PNP Power Transistor Inchange Semiconductor

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