2SA1217 Datasheet - Inchange Semiconductor

2SA1217, POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1217 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min). Good Linearity of hFE. Complement to Type 2SC2877. Minimum Lot-to-Lot vari.

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Datasheet Details

Part number:

2SA1217

Manufacturer:

Inchange Semiconductor

File Size:

214.05 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio frequency power amplifier and low speed switching applications.
* Suitable for output stage of 5 watts car radio and car stereo. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V

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2SA1217 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1217-like datasheet