2SA1217 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1217 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -40V (Min). Good Linearity of hFE. Complement to Type 2SC2877. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SA1217
Manufacturer: Inchange Semiconductor
File Size: 214.05 KB
Datasheet: 2SA1217_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio frequency power amplifier and low speed switching applications.
* Suitable for output stage of 5 watts car radio and car stereo. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V

2SA1217 Distributors

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2SA1217 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1217-like datasheet