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2SA1209 - POWER TRANSISTOR

2SA1209 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Good Linearity of hFE. High Switching Speed. Complement to Type 2SC2911.

2SA1209 Applications

* Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -140

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POWER TRANSISTOR Inchange Semiconductor
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