2SA1209 Datasheet, Transistor, Inchange Semiconductor

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2SA1209

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min)

Good Linearity of hFE

High Switching Speed

2SA1209 Application

• Applications
• Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

TAGS

2SA1209

Inchange Semiconductor

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