Datasheet Details
- Part number
- 2SA1209
- Manufacturer
- Inchange Semiconductor
- File Size
- 215.75 KB
- Datasheet
- 2SA1209_InchangeSemiconductor.pdf
- Description
- POWER TRANSISTOR
2SA1209 Description
isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min).
Good Linearity of hFE.
High Switching Speed.
Complement to Type 2SC2911.
2SA1209 Applications
* Designed for high-voltage switching and AF 100W predriver
applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-140
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