Datasheet4U Logo Datasheet4U.com

2SA1201 Datasheet - Toshiba Semiconductor

2SA1201 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1 to 2 W (mounted on a ceramic substrate) Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Em.

2SA1201_ToshibaSemiconductor.pdf

Preview of 2SA1201 PDF
2SA1201 Datasheet Preview Page 2 2SA1201 Datasheet Preview Page 3

Datasheet Details

Part number:

2SA1201

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

153.45 KB

Description:

Silicon pnp transistor.

📁 Related Datasheet

2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR (Toshiba Semiconductor)

2SA1200 PNP Transistors (Kexin)

2SA1201 Plastic-Encapsulate Transistors (GME)

2SA1201 Plastic-Encapsulate Transistors (WILLAS)

2SA1201 SILICON PNP EPITAXIAL TRANSISTOR (UTC)

2SA1201 TRANSISTOR (Jin Yu Semiconductor)

2SA1201 PNP Silicon Transistor (SeCoS)

2SA1201 Transistors (Kexin)

TAGS

2SA1201 2SA1201 Silicon PNP Transistor Toshiba Semiconductor

2SA1201 Distributor