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2SA1201 - Silicon PNP Transistor

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Part number 2SA1201
Manufacturer Toshiba Semiconductor
File Size 153.45 KB
Description Silicon PNP Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −120 V VCEO −120 V VEBO −5 V IC −800 mA IB −160 mA PC 500 PC mW 1000 (Note 1) Tj 150 °C Tstg −55 to 150 °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.
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