Datasheet4U Logo Datasheet4U.com

2SA1207 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

  • Adoption of FBET process.
  • High breakdown voltage.
  • Excellent linearity of hFE and small Cob.
  • Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage T.

📥 Download Datasheet

Datasheet preview – 2SA1207

Datasheet Details

Part number 2SA1207
Manufacturer Sanyo Semicon Device
File Size 100.06 KB
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SA1207 Datasheet
Additional preview pages of the 2SA1207 datasheet.

📁 Similar Datasheet

  • 2SA1200 - SILICON PNP TRIPLE DIFFUSED TRANSISTOR (Toshiba Semiconductor)
  • 2SA1200 - PNP Transistors (Kexin)
  • 2SA1201 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SA1201 - Plastic-Encapsulate Transistors (GME)
  • 2SA1201 - Plastic-Encapsulate Transistors (WILLAS)
  • 2SA1201 - SILICON PNP EPITAXIAL TRANSISTOR (UTC)
  • 2SA1201 - TRANSISTOR (Jin Yu Semiconductor)
  • 2SA1201 - PNP Silicon Transistor (SeCoS)
  • 2SA1201 - Transistors (Kexin)
  • 2SA1201 - Plastic-Encapsulate Transistors (TRANSYS)
Other Datasheets by Sanyo Semicon Device
  • 2SA1208 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1209 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1246 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1248 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1249 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1252 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1253 - PNP/NPN Epitaxial Planar Silicon Transistors
  • 2SA1256 - PNP Epitaxial Planar Silicon Transistors

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.
Published: |