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2SA1252 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • High VEBO.
  • Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter ( ) : 2SA1252 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions SANYO : CP Ratings (.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 F for AF Applications Features · High VEBO. · Wide ASO and high durability against breakdown.