2SA1252
2SA1252 is PNP/NPN Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- High VEBO.
- Wide ASO and high durability against breakdown.
Package Dimensions unit:mm 2018A
[2SA1252/2SC3134]
C : Collector B : Base E : Emitter
( ) : 2SA1252
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
SANYO : CP
Ratings (- )60 (- )50 (- )15 (- )150 (- )300 200 125
- 55 to +125
Unit V V V m A m A m W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO h FE f T Cob VCB=(- )40V, IE=0 VEB=(- )10V, IC=0 VCE=(- )6V, IC=(- )1m A VCE=(- )6V, IC=(- )1m A VCB=(- )6V, f=1MHz 90- 100 (3.5) 2.2 (- )0.5 (- )60 (- )50 (- )15 Conditions Ratings min typ max (- )0.1 (- )0.1 560- MHz p F V V V V Unit µA µA
VCE(sat) IC=(- )50m A, IB=(- )5m A V(BR)CBO IC=(- )10µA, IE=0 V(BR)CEO IC=(- )1m A, RBE=∞ V(BR)EBO IE=(- )10µA, IC=0
- : The 2SA1252/2SC3134 are classified as follows according to h FE at 1m A :
90 4 180 135 5 270 200 6 400 300 7 600
Marking 2SA1252 : D 2SC3134 : H h FE rank : 4, 5, 6, 7
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3187AT/3155MW, TS No.1048-1/4
Free Datasheet http://..
2SA1252/2SC3134
No.1048-2/4
Free Datasheet http://..
2SA1252/2SC3134
No.1048-3/4
Free Datasheet http://..
2SA1252/2SC3134
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or...
