2SA1252 Datasheet | Kexin Semiconductor

Features High VEBO. Wide ASO and high durability against breakdown. - plementary to 2SC3134 +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -15 -150 -300 200 125 -55 to +125 Electrical Characteristics Ta = 25 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 m A，IB = 0 VEBO IE= -100μA，IC=0 ICBO VCB= -40 V , IE=0 IEBO VEB= -10V , IC=0 VCE(sat) IC=-50 m A, IB=-5m A VBE(sat) IC=-50 m A, IB=-5m A h FE VCE= -6V, IC= -1m A Cob VCB= -6V, f=1MHz f T VCE= -6V, IC= -1m A - Classification of hfe Type Range Marking 2SA1252-D4 90-180 D4 2SA1252-D5 135-270...