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2SA1256 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • High fT (230MHz typ), and small Cre (1.1pF typ).
  • Small NF (2.5dB typ). Package Dimensions unit:mm 2018B [2SA1256] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications · Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. Features · High fT (230MHz typ), and small Cre (1.1pF typ). · Small NF (2.5dB typ).