2SA1255
2SA1255 is SILICON PNP TRIPLE DIFFUSED TRANSISTOR manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process)
High Voltage Switching Applications
Unit: mm
- High voltage: VCBO =
- 200 V (min) VCEO =
- 200 V (min)
- Small package
- plementary to 2SC3138
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
- 200
- 200
- 5
- 50
- 20 150 125
- 55~125
V V V m A m A m W °C °C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking
1 2007-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output...
