2SA1255 - SILICON PNP TRIPLE DIFFUSED TRANSISTOR

Toshiba

Datasheet Details

Part number	2SA1255
Manufacturer	Toshiba
File Size	229.40 KB
Description	SILICON PNP TRIPLE DIFFUSED TRANSISTOR
Datasheet	2SA1255 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SA1200	SILICON PNP TRIPLE DIFFUSED TRANSISTOR
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2SA1202	Silicon PNP Transistor
2SA1203	Silicon PNP Transistor
2SA1213	Silicon PNP Transistor

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TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 2SA1255 High Voltage Switching Applications Unit: mm • High voltage: VCBO = −200 V (min) VCEO = −200 V (min) • Small package • Complementary to 2SC3138 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −200 −200 −5 −50 −20 150 125 −55~125 V V V mA mA mW °C °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.