* Adoption of FBET process.
* High breakdown voltage.
* Excellent linearity of hFE and small Cob.
* Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1208 Specifications Absolute Maximum Ratin
2SA1208
Sanyo Semicon Device
63.89 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications .
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