2SA1225 Datasheet - Toshiba Semiconductor

2SA1225 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1225 Unit: mm High transition frequency: fT = 100 MHz (typ.) Complementary to 2SC2983 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current Base current Collector.

2SA1225 Features

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2SA1225_ToshibaSemiconductor.pdf