2SA1200 - SILICON PNP TRIPLE DIFFUSED TRANSISTOR
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications High voltage: VCEO = 150 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collect
