2SA1200
Toshiba ↗ Semiconductor
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Silicon pnp triple diffused transistor.
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2SA1200 - PNP Transistors
(Kexin)
SMD Type
High Voltage Switching Applications 2SA1200
Transistors
Features
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.) .
2SA1201 - Silicon PNP Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications Power Amplifier Applications
2SA1201
Unit: mm
• H.
2SA1201 - Plastic-Encapsulate Transistors
(GME)
Plastic-Encapsulate Transistors
FEATURES
z High voltage z High transition frequency z Small flatpackage z Complementary to 2SC2881
Pb
Lead-free
Pro.
2SA1201 - Plastic-Encapsulate Transistors
(WILLAS)
WILLAS
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+ 2SA12T0H1RU
FM1200-.
2SA1201 - SILICON PNP EPITAXIAL TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SA1201
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power.
2SA1201 - TRANSISTOR
(Jin Yu Semiconductor)
2SA1 201
TRANSISTOR(PNP)
FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise note.
2SA1201 - PNP Silicon Transistor
(SeCoS)
2SA1201
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES z High voltage z High transition fr.
2SA1201 - Transistors
(Kexin)
SMD Type
Voltage Amplifier Applications 2SA1201
Transistors
Features
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small.
2SA1201 - Plastic-Encapsulate Transistors
(TRANSYS)
Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SA1201
FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) 2. COLLECTOR 3. .
2SA1201-O - PNP Silicon Power Transistors
(MCC)
MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
