2SA1227 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). Good Linearity of hFE. Complement to Type 2SC2987. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SA1227
Manufacturer: Inchange Semiconductor
File Size: 222.49 KB
Datasheet: 2SA1227_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Curre

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2SA1227 POWER TRANSISTOR Inchange Semiconductor

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