2SB1340 Silicon PNP Darlington Power Transistor

Inchange Semiconductor Company Limited

Description

isc Silicon PNP Darlington Power Transistor 2SB1340 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A). Complement to T.

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Datasheet Specifications

Part number: 2SB1340
Manufacturer: Inchange Semiconductor Company Limited
File Size: 214.31 KB
Datasheet: 2SB1340_InchangeSemiconductorCompanyLimited.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak

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Silicon PNP Darlington Power Transistor Inchange Semiconductor Company Limited

Inchange Semiconductor Company Limited 2SB1340-like datasheet