2SB1340 Datasheet, Transistor, Inchange Semiconductor Company Limited

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2SB1340

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Inchange Semiconductor Company Limited

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📄 Datasheet

Description:

Silicon pnp darlington power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)

High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC=

2SB1340 Application

• Applications
• Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

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2SB1340

Inchange Semiconductor Company Limited

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