2SB1340 Datasheet - Inchange Semiconductor Company Limited

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2SB1340 Silicon PNP Darlington Power Transistor

isc Silicon PNP Darlington Power Transistor 2SB1340 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A). Complement to T.

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Datasheet Details

Part number:

2SB1340

Manufacturer:

Inchange Semiconductor Company Limited

File Size:

214.31 KB

Description:

Silicon PNP Darlington Power Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak

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2SB1340 Silicon PNP Darlington Power Transistor Inchange Semiconductor Company Limited

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