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2SB1340 Datasheet - Inchange Semiconductor Company Limited

2SB1340 Silicon PNP Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) *Complement to Type 2SD1889 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll.

2SB1340 Datasheet (214.31 KB)

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Datasheet Details

Part number:

2SB1340

Manufacturer:

Inchange Semiconductor Company Limited

File Size:

214.31 KB

Description:

Silicon pnp darlington power transistor.

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2SB1340 Silicon PNP Darlington Power Transistor Inchange Semiconductor Company Limited

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