BD302 Datasheet - Inchange Semiconductor Company Limited

BD302, Silicon PNP Power Transistor

isc Silicon PNP Power Transistor BD302 .
DC Current Gain - : hFE = 30(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min. Complement to Type BD301. M.

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BD302_InchangeSemiconductorCompanyLimited.pdf

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Datasheet Details

Part number:

BD302

Manufacturer:

Inchange Semiconductor Company Limited

File Size:

210.63 KB

Description:

Silicon PNP Power Transistor

Applications

* Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Curr

BD302 Distributors

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BD302 Silicon PNP Power Transistor Inchange Semiconductor Company Limited

Inchange Semiconductor Company Limited BD302-like datasheet