BD302 Silicon PNP Power Transistor

Inchange Semiconductor Company Limited

Description

isc Silicon PNP Power Transistor BD302 .
DC Current Gain - : hFE = 30(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min. Complement to Type BD301. M.

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Datasheet Specifications

Part number: BD302
Manufacturer: Inchange Semiconductor Company Limited
File Size: 210.63 KB
Datasheet: BD302_InchangeSemiconductorCompanyLimited.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Curr

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📁 Related Datasheet

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BD302 Silicon PNP Power Transistor Inchange Semiconductor Company Limited

Inchange Semiconductor Company Limited BD302-like datasheet