2N5686 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5686 .
High DC Current Gain-hFE=15~60@IC = 25A. Low Saturation Voltage- VCE(sat)= 1. Minimum Lot-to-Lot variations for robust.

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Datasheet Specifications

Part number: 2N5686
Manufacturer: Inchange Semiconductor
File Size: 135.20 KB
Datasheet: 2N5686-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in high power amplifer and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 50 A IB Ba

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2N5686 Silicon NPN Power Transistors Inchange Semiconductor

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