2N5686 - Silicon NPN Power Transistors

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Inchange Semiconductor

Datasheet Details

Part number	2N5686
Manufacturer	Inchange Semiconductor
File Size	135.20 KB
Description	Silicon NPN Power Transistors
Datasheet	2N5686 Datasheet
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Product details

Description

High DC Current Gain-hFE=15~60@IC = 25A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A Minimum Lot-to-Lot variations for robust device performance and reliable operation.APPLICATIONS Designed for use in high power amplifer and switching circuits applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 50 A

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Published: Oct 14, 2016 |