2N6420 Datasheet, transistor equivalent, Inchange Semiconductor

PDF File Details

Part number:

2N6420

Manufacturer:

Inchange Semiconductor

File Size:

46.60kb

Download:

📄 Datasheet

Description:

Silicon pnp power transistor.

  • Contunuous Collector Current-IC= -1A
  • Power Dissipation-PC= 35W @TC= 25℃
  • Collector-Emitter Saturation Volta

  • Datasheet Preview: 2N6420 📥 Download PDF (46.60kb)
    Page 2 of 2N6420

    2N6420 Application

    • Applications
    • Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regula

    TAGS

    2N6420
    Silicon
    PNP
    Power
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    2N6420 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
    2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series d.

    2N6421 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
    2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series d.

    2N6421 - Silicon PNP Power Transistors (Inchange Semiconductor)
    INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6421 DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Di.

    2N6422 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
    2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series d.

    2N6422 - Silicon PNP Power Transistor (INCHANGE)
    isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device.

    2N6423 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
    2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series d.

    2N6423 - Silicon PNP Power Transistor (INCHANGE)
    isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device.

    2N6424 - PNP Silicon Power Transistor (Central Semiconductor)
    145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

    2N6424 - Bipolar PNP Device (Seme LAB)
    2N6424 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Herm.

    2N6425 - PNP Silicon Power Transistor (Central Semiconductor)
    145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts