2N6041 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min). Low Collector-Emitter Sa.

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Datasheet Specifications

Part number: 2N6041
Manufacturer: Inchange Semiconductor
File Size: 144.23 KB
Datasheet: 2N6041-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector

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2N6041 Silicon PNP Power Transistors Inchange Semiconductor

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