2N6051 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor isc Product Specification 2N6051 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = -6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)=.

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Datasheet Specifications

Part number: 2N6051
Manufacturer: Inchange Semiconductor
File Size: 139.15 KB
Datasheet: 2N6051-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12

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2N6051 Silicon PNP Power Transistors Inchange Semiconductor

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