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2N6051 - Silicon PNP Power Transistors

2N6051 Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor isc Product Specification 2N6051 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = -6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)=.

2N6051 Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12

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Datasheet Details

Part number
2N6051
Manufacturer
Inchange Semiconductor
File Size
139.15 KB
Datasheet
2N6051-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

📁 Related Datasheet

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor 2N6051-like datasheet