2N6213 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number: 2N6213
Manufacturer: Inchange Semiconductor
File Size: 189.39 KB
Datasheet: 2N6213-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -400

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Silicon PNP Power Transistor Inchange Semiconductor

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