2N6289 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2N6289 .
DC Current Gain- : hFE = 30-150@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 30V(Min). Minimum Lot-to-Lot variations for r.

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Datasheet Specifications

Part number: 2N6289
Manufacturer: Inchange Semiconductor
File Size: 188.85 KB
Datasheet: 2N6289-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM

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2N6289 Silicon NPN Power Transistor Inchange Semiconductor

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