2N6289
Inchange Semiconductor
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Silicon npn power transistor. DC Current Gain- : hFE = 30-150@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 30V(Min) Minimu
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2N6280 - HIGH-POWER NPN SILICON TRANSISTORS
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designed for use in industrial-military power amplifier and switching circuit appli.
2N6280 - Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device
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Part Number
mIaCx (A)
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Ratings based on 25˚C case temperature unless o.
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2N6281 - NPN POWER TRANSISTORS
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Part Number
mIaCx (A)
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2N6282 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6282/D
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isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC = 10 Adc .