2N6040 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min). Low Collector-Emitter Sa.

📥 Download Datasheet

2N6040 Datasheet Preview — Preview of 2N6040 PDF

Datasheet Specifications

Part number: 2N6040
Manufacturer: Inchange Semiconductor
File Size: 144.27 KB
Datasheet: 2N6040-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector

2N6040 Distributors

📁 Related Datasheet

2N6041 2N6042 2N6043 2N6044 2N6045 2N6045G

📌 All Tags

2N6040 Silicon PNP Power Transistors Inchange Semiconductor

Inchange Semiconductor 2N6040-like datasheet