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2N6040 - Silicon PNP Power Transistors

2N6040 Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -4A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min). Low Collector-Emitter Sa.

2N6040 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector

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Datasheet Details

Part number
2N6040
Manufacturer
Inchange Semiconductor
File Size
144.27 KB
Datasheet
2N6040-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor 2N6040-like datasheet