Datasheet Details
- Part number
- 2N6040
- Manufacturer
- Inchange Semiconductor
- File Size
- 144.27 KB
- Datasheet
- 2N6040-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistors
2N6040 Description
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor .
High DC Current Gain-
: hFE = 1000(Min)@ IC= -4A.
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min).
Low Collector-Emitter Sa.
2N6040 Applications
* Designed for general purpose amplifier and low speed
switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-8
ICM Collector
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