Datasheet Details
- Part number
- 2N6050
- Manufacturer
- Inchange Semiconductor
- File Size
- 250.18 KB
- Datasheet
- 2N6050-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistors
2N6050 Description
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 .
Built-in Base-Emitter Shunt Resistors.
High DC current gain.
Complement to type 2N6057.
100% avalanche tested.
Minimum Lot-to-Lot.
2N6050 Applications
* Designed for general purpose amplifier and low frequency
switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-12
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