2N6050 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 .
Built-in Base-Emitter Shunt Resistors. High DC current gain. Complement to type 2N6057. 100% avalanche tested. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2N6050
Manufacturer: Inchange Semiconductor
File Size: 250.18 KB
Datasheet: 2N6050-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12

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2N6050 Silicon PNP Power Transistors Inchange Semiconductor

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