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2N6050 - Silicon PNP Power Transistors

2N6050 Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 .
Built-in Base-Emitter Shunt Resistors. High DC current gain. Complement to type 2N6057. 100% avalanche tested. Minimum Lot-to-Lot.

2N6050 Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12

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Datasheet Details

Part number
2N6050
Manufacturer
Inchange Semiconductor
File Size
250.18 KB
Datasheet
2N6050-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

📁 Related Datasheet

  • 2N6051 - PNP Darlington Power Silicon Transistor (VPT)
  • 2N6052 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR (ON Semiconductor)
  • 2N6053 - PNP Transistor (DIGITRON)
  • 2N6054 - Darlington Transistor (Multicomp)
  • 2N6055 - (2N6055 / 2N6056) Silicon Power Transistor (SavantIC)
  • 2N6056 - NPN Darlington Silicon Power Transistor (ON Semiconductor)
  • 2N6057 - Bipolar NPN Device (Seme LAB)
  • 2N6058 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor 2N6050-like datasheet