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2N6052

Silicon PNP Power Transistors

2N6052 General Description


*Built-in Base-Emitter Shunt Resistors
*High DC current gain- hFE = 750 (Min) @ IC = -6A
*Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min)
*Complement to type 2N6059
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*.

2N6052 Datasheet (184.67 KB)

Preview of 2N6052 PDF

Datasheet Details

Part number:

2N6052

Manufacturer:

Inchange Semiconductor

File Size:

184.67 KB

Description:

Silicon pnp power transistors.

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