2N6052 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = -6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)=.

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Datasheet Specifications

Part number: 2N6052
Manufacturer: Inchange Semiconductor
File Size: 184.67 KB
Datasheet: 2N6052-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Coll

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2N6052 Silicon PNP Power Transistors Inchange Semiconductor

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