Datasheet Details
- Part number
- 2N6052
- Manufacturer
- Inchange Semiconductor
- File Size
- 184.67 KB
- Datasheet
- 2N6052-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistors
2N6052 Description
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 .
Built-in Base-Emitter Shunt Resistors.
High DC current gain-
hFE = 750 (Min) @ IC = -6A.
Collector-Emitter Sustaining Voltage-
VCEO(SUS)=.
2N6052 Applications
* Designed for general purpose amplifier and low frequency
switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO IC ICM
Emitter-Base Voltage Collector Current -Continuous Coll
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