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2N6057 - Silicon NPN Power Transistors

2N6057 Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = 6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)=.

2N6057 Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12

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Datasheet Details

Part number
2N6057
Manufacturer
Inchange Semiconductor
File Size
139.42 KB
Datasheet
2N6057-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2N6057-like datasheet