2N6057 Silicon NPN Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 750 (Min) @ IC = 6A. Collector-Emitter Sustaining Voltage- VCEO(SUS)=.

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Datasheet Specifications

Part number: 2N6057
Manufacturer: Inchange Semiconductor
File Size: 139.42 KB
Datasheet: 2N6057-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12

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2N6057 Silicon NPN Power Transistors Inchange Semiconductor

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