Datasheet Details
- Part number
- 2N6057
- Manufacturer
- Inchange Semiconductor
- File Size
- 139.42 KB
- Datasheet
- 2N6057-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistors
2N6057 Description
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 .
Built-in Base-Emitter Shunt Resistors.
High DC current gain-
hFE = 750 (Min) @ IC = 6A.
Collector-Emitter Sustaining Voltage-
VCEO(SUS)=.
2N6057 Applications
* Designed for general purpose amplifier and low frequency
switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
12
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