2N6235 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min). DC Current Gain- : hFE = 25-125@ IC= 1A. Low Collector-Emitter Saturat.

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Datasheet Specifications

Part number: 2N6235
Manufacturer: Inchange Semiconductor
File Size: 187.59 KB
Datasheet: 2N6235-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed f for high-voltage medium power and switching reguators applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5

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Silicon NPN Power Transistor Inchange Semiconductor

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