Datasheet4U Logo Datasheet4U.com

2N6421 Silicon PNP Power Transistors

2N6421 Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6421 .
Contunuous Collector Current-IC= -2A. Power Dissipation-PC= 35W @TC= 25℃. Collector-Emitter Saturation Voltage- : VCE(sat)= -0.

2N6421 Applications

* Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -375 V

📥 Download Datasheet

Preview of 2N6421 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N6421
Manufacturer
Inchange Semiconductor
File Size
139.56 KB
Datasheet
2N6421-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

📁 Related Datasheet

  • 2N6420 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
  • 2N6422 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
  • 2N6423 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
  • 2N6424 - PNP Silicon Power Transistor (Central Semiconductor)
  • 2N6425 - PNP Silicon Power Transistor (Central Semiconductor)
  • 2N6426 - Darlington Transistors (ON Semiconductor)
  • 2N6427 - NPN Darlington transistor (NXP)
  • 2N6428 - NPN EPITAXIAL SILICON TRANSISTOR (Samsung semiconductor)

📌 All Tags

Inchange Semiconductor 2N6421-like datasheet