2SA1606 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1606 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min). Large Current Capacity. Complement to Type 2SC4159. Minimum Lot-to-L.

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Datasheet Specifications

Part number: 2SA1606
Manufacturer: Inchange Semiconductor
File Size: 213.58 KB
Datasheet: 2SA1606-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuou

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2SA1606 Silicon PNP Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SA1606-like datasheet