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2SA1606 Silicon PNP Power Transistor

2SA1606 Description

isc Silicon PNP Power Transistor 2SA1606 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min). Large Current Capacity. Complement to Type 2SC4159. Minimum Lot-to-L.

2SA1606 Applications

* Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuou

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Datasheet Details

Part number
2SA1606
Manufacturer
Inchange Semiconductor
File Size
213.58 KB
Datasheet
2SA1606-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SA1606-like datasheet